Fermi-FET Technology Description
The silicon CMOS industry currently employs dual surface-channel
inversion (SCI) MOSFET technology. These types of devices have enjoyed
wide popularity due to their scalability and ease of implementation.
Older CMOS technologies using a single n+-type poly gate also provided
buried-channel PMOS devices, whic are difficult to scale.
The Fermi-FET transistor architecture is a patented optimization of a
traditional bulk buried-channel MOSFET. A typical CMOS implementation
of the Fermi-FET architecture results in complementary (N and P)MOS
counter-doped channel MOSFETs. This is very unusual, and is not
commonly found in the industry. The Fermi-FET incorporates a pn
junction beneath the conduction channel slightly beneath the silicon
surface. The potential profile created by this junction gives this
device many of the advantages of more advanced transistor structures
(e.g. Fin-FET) and SOI technologies, while maintaining the process
simplicity and low cost of conventional planar bulk CMOS process
technology
The Fermi-FET transistor delivers significant improvements in circuit
performance, power dissipation, and manufacturing cost. This architecture makes use of a subtle
optimization of accumulation channel devices in a traditional bulk silicon manufacturing technology,
while maintaining large improvements in channel mobility.
Compared to conventional surface channel inversion types of FETs, Fermi-FET transistors
produced in a commercial process line have shown significantly higher drive currents, improved
sub-threshold slope, and a 10X improvement in hot electron lifetime.
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Technology Support
Thunderbird can offer a range of engineering services to licensees. These services include the integration of the
Fermi-FET into existing CMOS process flows, simulation of integrated Fermi-FET device designs, recommendation
and modification to Fermi-FET structures for various product applications, and assistance with the fine-tuning
of Fermi-FET designs to ensure optimal performance.
Thunderbird has developed relationships with leading industry TCAD tool vendors to assure the availability of
sufficient design support to complement licensee's internal design capability during the transition to Fermi-FET
technology.
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