Refereed Publications
The Thunderbird Technologies Fermi-FET concepts have been explored via several Ph.D. dissertations at Georgia Institute of
Technology and Duke University. Prof. James D. Meindl at Georgia Tech and Prof. Richard B. Fair at Duke University were supervisors of this work. In addition, a number of papers have been submitted to refereed journals and conferednces. Following here are some references. Please contact Thiunderbird for copies of these papers and/or dissertations.
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B. L. Austin, X. Tang, J. D. Meindl, M. Dennen, and W.
Richards, Threshold voltage roll-off model for low power
bulk accumulation MOSFETs. Proceedings of the IEEE International
ASIC Conference, Rochester, NY, pages 175-179, Sept. 13-16
1998.
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R. Murali,
B.L. Austin, Lihui Wang; J.D. Meindl, Short-channel modeling
of bulk accumulation MOSFETs, IEEE Transactions on Electron
Devices, Vo. 51, No. 6, June 2004, pp.940-947.
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R. Murali,
B.L. Austin, Lihui Wang; J.D. Meindl, Scaled accumulation
FETs for ultra-low power logic, Proc. 15th Annual IEEE International
ASIC/SOC Conference 2002, 25-28 Sept. 2002, pp. 371-375.
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R. Murali, B.L. Austin, Lihui Wang; J.D.
Meindl, Low-power circuit advantages of the scaled accumulation
FET, Proc. of ISCAS 2002. IEEE International Symposium
on Circuits and Systems, 2002, Vol. 5, 26-29, May 2002,
pp. V-201-V-204.
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B. L. Austion, "Performance Analysis and Scaling Opportunities of Bulk CMOS Inversion and Accumulation Devices", Ph.D. Dissertation, Georgia Institute of Technology, May, 2001.
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W. R. Richards, "Scaling of Buried-Channel MOSFETs for Submicron Applications", Ph.D. Dissertation, Duke University, April, 1999.
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Thunderbird Internal DocumentsIn addition to the externally publsihed works, Thunderbird maintains a library of internal white papers, journal submissions and PowerPoint presentations which may be made available upon request. The PowerPoint presentations are usually tailored by request for particular product areas. These presentations are complete with device diagrams, analytical expressions, figures and provide fundamental Fermi-FET theory, experimental data, and application discussions.
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